IRFH5306TR2PBF

IRFH5306TR2PBF Infineon Technologies


infineon-irfh5306-datasheet-v01_01-en.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH 30V 15A 8-Pin PQFN T/R
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Технічний опис IRFH5306TR2PBF Infineon Technologies

Description: MOSFET N-CH 30V 15A 5X6 PQFN, Packaging: Cut Tape (CT), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 44A (Tc), Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: PQFN (5x6) Single Die, Part Status: Obsolete, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1125 pF @ 15 V.

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IRFH5306TR2PBF IRFH5306TR2PBF Виробник : Infineon Technologies irfh5306pbf.pdf?fileId=5546d462533600a40153561e89bd1ecc Description: MOSFET N-CH 30V 15A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1125 pF @ 15 V
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IRFH5306TR2PBF IRFH5306TR2PBF Виробник : Infineon / IR irfh5306pbf-1169309.pdf MOSFET MOSFT 30V 44A 8.1mOhm mx 7.8nC Qg
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