Технічний опис IRFH7184TRPBF Infineon / IR
Description: MOSFET N-CH 100V 20A/128A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 128A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 50A, 10V, Power Dissipation (Max): 3.9W (Ta), 156W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 150µA, Supplier Device Package: PQFN (5x6), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 50 V.
Інші пропозиції IRFH7184TRPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRFH7184TRPBF | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 100V 20A 8-Pin PQFN EP T/R |
товар відсутній |
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IRFH7184TRPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 100V 20A/128A PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 128A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 150µA Supplier Device Package: PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 50 V |
товар відсутній |