IRFH8202TRPBF Infineon Technologies

Description: MOSFET N-CH 25V 47A/100A 8PQFN, Vgs(th) (Max) @ Id: 2.35V @ 150µA, Power Dissipation (Max): 3.6W (Ta), 160W (Tc), Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-PQFN (5x6).