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IRFH8202TRPBF

IRFH8202TRPBF Infineon Technologies

Infineon_IRFH8202_DataSheet_v02_04_EN-1228371.pdf
Виробник: Infineon Technologies
MOSFET MOSFET N-CH 25V 100A PQFN
на замовлення 3896 шт:
термін постачання 189-198 дні (днів)
КількістьЦіна
3+138.97 грн
10+133.74 грн
100+99.38 грн
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4000+54.69 грн
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Технічний опис IRFH8202TRPBF Infineon Technologies

Description: MOSFET N-CH 25V 47A/100A 8PQFN, Vgs(th) (Max) @ Id: 2.35V @ 150µA, Power Dissipation (Max): 3.6W (Ta), 160W (Tc), Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-PQFN (5x6).

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IRFH8202TRPBF IRFH8202TRPBF Infineon Technologies irfh8202pbf.pdf?fileId=5546d462533600a40153561f7c351f0c Description: MOSFET N-CH 25V 47A/100A 8PQFN
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
товару немає в наявності
В кошику  од. на суму  грн.
IRFH8202TRPBF IRFH8202TRPBF Infineon Technologies irfh8202pbf.pdf?fileId=5546d462533600a40153561f7c351f0c Description: MOSFET N-CH 25V 47A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH8202TRPBF irfh8202pbf.pdf?fileId=5546d462533600a40153561f7c351f0c
IRFH8202TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 47A/100A 8PQFN
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
товару немає в наявності
В кошику  од. на суму  грн.
IRFH8202TRPBF irfh8202pbf.pdf?fileId=5546d462533600a40153561f7c351f0c
IRFH8202TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 47A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
товару немає в наявності
В кошику  од. на суму  грн.