IRFH8321TRPBF Infineon Technologies

Description: MOSFET N CH 30V 21A PQFN5X6, Packaging: Tape & Reel (TR), Package / Case: 8-TQFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 83A (Tc), Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V, Power Dissipation (Max): 3.4W (Ta), 54W (Tc), Vgs(th) (Max) @ Id: 2V @ 50µA, Supplier Device Package: PQFN (5x6), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V.