IRFH8334TR2PBF Infineon Technologies

Description: MOSFET N-CH 30V 12A 5X6 PQFN, Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Part Status: Obsolete, Supplier Device Package: PQFN (5x6), Vgs(th) (Max) @ Id: 2.35V @ 25µA, Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Cut Tape (CT).