IRFH8337TRPBF Infineon Technologies

Description: MOSFET N-CH 30V 12A/35A PQFN, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16.2A, 10V, Power Dissipation (Max): 3.2W (Ta), 27W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 10 V.