Технічний опис IRFHM4226TRPBF Infineon
Description: MOSFET N CH 25V 28A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-TQFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V, Power Dissipation (Max): 2.7W (Ta), 39W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 50µA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 13 V.
Інші пропозиції IRFHM4226TRPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRFHM4226TRPBF | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 25V 28A 8-Pin PQFN EP T/R |
товар відсутній |
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IRFHM4226TRPBF | Виробник : Infineon Technologies |
Description: MOSFET N CH 25V 28A PQFN Packaging: Tape & Reel (TR) Package / Case: 8-TQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Power Dissipation (Max): 2.7W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 50µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 13 V |
товар відсутній |