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Технічний опис IRFHM4231TRPBF Infineon / IR
Description: MOSFET N-CH 25V 40A 8PQFN, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-PQFN (3x3), Vgs(th) (Max) @ Id: 2.1V @ 35µA, Power Dissipation (Max): 2.7W (Ta), 29W (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 13 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V.
Інші пропозиції IRFHM4231TRPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IRFHM4231TRPBF | Infineon Technologies |
 Description: MOSFET N-CH 25V 40A 8PQFNDrive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PQFN (3x3) Vgs(th) (Max) @ Id: 2.1V @ 35µA Power Dissipation (Max): 2.7W (Ta), 29W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 13 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V |
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IRFHM4231TRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 40A 8PQFN Vgs(th) (Max) @ Id: 2.1V @ 35µA Power Dissipation (Max): 2.7W (Ta), 29W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 13 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PQFN (3x3) |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFHM4231TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 40A 8PQFN
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (3x3)
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Power Dissipation (Max): 2.7W (Ta), 29W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Description: MOSFET N-CH 25V 40A 8PQFN
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (3x3)
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Power Dissipation (Max): 2.7W (Ta), 29W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
товару немає в наявності
В кошику
од. на суму грн.
| IRFHM4231TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 40A 8PQFN
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Power Dissipation (Max): 2.7W (Ta), 29W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (3x3)
Description: MOSFET N-CH 25V 40A 8PQFN
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Power Dissipation (Max): 2.7W (Ta), 29W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (3x3)
товару немає в наявності
В кошику
од. на суму грн.