IRFHM4231TRPBF Infineon / IR

Description: MOSFET N-CH 25V 40A 8PQFN, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-PQFN (3x3), Vgs(th) (Max) @ Id: 2.1V @ 35µA, Power Dissipation (Max): 2.7W (Ta), 29W (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 13 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V.