IRFHM4234TRPBF International Rectifier

Description: HEXFET POWER MOSFET, Packaging: Bulk, Package / Case: 8-TQFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V, Power Dissipation (Max): 2.8W (Ta), 28W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 25µA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V.