Технічний опис IRFHM7194TRPBF Infineon / IR
Description: MOSFET N-CH 100V 9.3A/34A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 34A (Tc), Rds On (Max) @ Id, Vgs: 16.4mOhm @ 20A, 10V, Power Dissipation (Max): 2.8W (Ta), 37W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 50µA, Supplier Device Package: 8-PQFN (3.3x3.3), Power33, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 50 V.
Інші пропозиції IRFHM7194TRPBF
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IRFHM7194TRPBF | Виробник : Infineon Technologies |
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товару немає в наявності |
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IRFHM7194TRPBF | Виробник : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 16.4mOhm @ 20A, 10V Power Dissipation (Max): 2.8W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 50µA Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 50 V |
товару немає в наявності |