IRFHM8228TRPBF Infineon / IR

Description: MOSFET N-CH 25V 19A 8PQFN, Input Capacitance (Ciss) (Max) @ Vds: 1667 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-PQFN (3.3x3.3), Power33, Vgs(th) (Max) @ Id: 2.35V @ 25µA, Power Dissipation (Max): 2.8W (Ta), 34W (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).