IRFHM830TR2PBF Infineon Technologies

Description: MOSFET N-CH 30V 21A PQFN, Packaging: Cut Tape (CT), Package / Case: 8-VQFN Exposed Pad, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V, Vgs(th) (Max) @ Id: 2.35V @ 50µA, Supplier Device Package: PQFN (3x3), Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2155 pF @ 25 V.