Технічний опис IRFHM830TR2PBF Infineon
Description: MOSFET N-CH 30V 21A PQFN, Packaging: Cut Tape (CT), Package / Case: 8-VQFN Exposed Pad, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V, Vgs(th) (Max) @ Id: 2.35V @ 50µA, Supplier Device Package: PQFN (3x3), Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2155 pF @ 25 V.
Інші пропозиції IRFHM830TR2PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IRFHM830TR2PBF | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R |
товару немає в наявності |
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IRFHM830TR2PBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 30V 21A PQFN Packaging: Cut Tape (CT) Package / Case: 8-VQFN Exposed Pad Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.35V @ 50µA Supplier Device Package: PQFN (3x3) Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2155 pF @ 25 V |
товару немає в наявності |