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IRFHM831TRPBF Infineon


irfhm831pbf.pdf?fileId=5546d462533600a4015356233dba1f49 Виробник: Infineon

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термін постачання 14-28 дні (днів)
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Технічний опис IRFHM831TRPBF Infineon

Description: MOSFET N-CH 30V 14A/40A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 12A, 10V, Power Dissipation (Max): 2.5W (Ta), 27W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: PQFN (3x3), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V.

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IRFHM831TRPBF IRFHM831TRPBF Виробник : Infineon Technologies irfhm831pbf.pdf?fileId=5546d462533600a4015356233dba1f49 Description: MOSFET N-CH 30V 14A/40A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
товар відсутній
IRFHM831TRPBF IRFHM831TRPBF Виробник : Infineon Technologies irfhm831pbf.pdf?fileId=5546d462533600a4015356233dba1f49 Description: MOSFET N-CH 30V 14A/40A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
товар відсутній
IRFHM831TRPBF IRFHM831TRPBF Виробник : Infineon Technologies irfhm831pbf-1732897.pdf MOSFET 30V 1 N-CH HEXFET 7.8mOhms 7.3nC
товар відсутній