Технічний опис IRFHM831TRPBF Infineon
Description: MOSFET N-CH 30V 14A/40A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 12A, 10V, Power Dissipation (Max): 2.5W (Ta), 27W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: PQFN (3x3), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V.
Інші пропозиції IRFHM831TRPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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IRFHM831TRPBF | Infineon Technologies |
 Description: MOSFET N-CH 30V 14A/40A PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 12A, 10V Power Dissipation (Max): 2.5W (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: PQFN (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
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IRFHM831TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 14A/40A PQFN Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Part Status: Obsolete Supplier Device Package: PQFN (3x3) Vgs(th) (Max) @ Id: 2.35V @ 25µA Power Dissipation (Max): 2.5W (Ta), 27W (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
товару немає в наявності |
В кошику од. на суму грн. |
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IRFHM831TRPBF | Infineon Technologies |
MOSFET 30V 1 N-CH HEXFET 7.8mOhms 7.3nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFHM831TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A/40A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Description: MOSFET N-CH 30V 14A/40A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRFHM831TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A/40A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Part Status: Obsolete
Supplier Device Package: PQFN (3x3)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: MOSFET N-CH 30V 14A/40A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Part Status: Obsolete
Supplier Device Package: PQFN (3x3)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
товару немає в наявності
В кошику
од. на суму грн.
| IRFHM831TRPBF |
|
Виробник: Infineon Technologies
MOSFET 30V 1 N-CH HEXFET 7.8mOhms 7.3nC
MOSFET 30V 1 N-CH HEXFET 7.8mOhms 7.3nC
товару немає в наявності
В кошику
од. на суму грн.