Технічний опис IRFHM8342TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 10A 8PQFN, Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-PQFN (3.3x3.3), Power33, Vgs(th) (Max) @ Id: 2.35V @ 25µA, Power Dissipation (Max): 2.6W (Ta), 20W (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 17A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції IRFHM8342TRPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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IRFHM8342TRPBF | Infineon Technologies |
 Description: MOSFET N-CH 30V 10A 8PQFNInput Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Vgs(th) (Max) @ Id: 2.35V @ 25µA Power Dissipation (Max): 2.6W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 17A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
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IRFHM8342TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 10A 8PQFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Vgs(th) (Max) @ Id: 2.35V @ 25µA Power Dissipation (Max): 2.6W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 17A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFHM8342TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 10A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.6W (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 10A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.6W (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| IRFHM8342TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 10A 8PQFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.6W (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Description: MOSFET N-CH 30V 10A 8PQFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.6W (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
товару немає в наявності
В кошику
од. на суму грн.