IRFHM9331TRPBF Infineon Technologies
| Кількість | Ціна |
|---|---|
| 7+ | 52.43 грн |
| 10+ | 37.53 грн |
| 25+ | 28.76 грн |
| 100+ | 25.04 грн |
| 250+ | 23.98 грн |
| 500+ | 19.55 грн |
| 1000+ | 18.14 грн |
Відгуки про товар
Написати відгук
Технічний опис IRFHM9331TRPBF Infineon Technologies
Description: MOSFET P-CH 30V 11A/24A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 11A, 20V, Power Dissipation (Max): 2.8W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 25µA, Supplier Device Package: PQFN (3x3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, 20V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1543 pF @ 25 V.
Інші пропозиції IRFHM9331TRPBF за ціною від 16.10 грн до 68.83 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRFHM9331TRPBF | INFINEON TECHNOLOGIES |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -9A; 2.8W; PQFN3.3X3.3 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -9A Power dissipation: 2.8W Case: PQFN3.3X3.3 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
на замовлення 787 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
 |
IRFHM9331TRPBF | Infineon Technologies |
Description: MOSFET P-CH 30V 11A/24A PQFN Input Capacitance (Ciss) (Max) @ Vds: 1543 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: PQFN (3x3) Vgs(th) (Max) @ Id: 2.4V @ 25µA Power Dissipation (Max): 2.8W (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 11A, 20V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) |
на замовлення 2962 шт: термін постачання 21-31 дні (днів) |
|
| IRFHM9331TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; 2.8W; PQFN3.3X3.3
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Power dissipation: 2.8W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; 2.8W; PQFN3.3X3.3
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Power dissipation: 2.8W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 787 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 55.43 грн |
| 25+ | 39.96 грн |
| 50+ | 34.88 грн |
| 100+ | 30.14 грн |
| 250+ | 24.89 грн |
| 500+ | 21.50 грн |
| 650+ | 20.40 грн |
| IRFHM9331TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 11A/24A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1543 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PQFN (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Power Dissipation (Max): 2.8W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11A, 20V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET P-CH 30V 11A/24A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1543 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PQFN (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Power Dissipation (Max): 2.8W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11A, 20V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 2962 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 68.83 грн |
| 10+ | 41.37 грн |
| 100+ | 27.02 грн |
| 500+ | 19.55 грн |
| 1000+ | 17.68 грн |
| 2000+ | 16.10 грн |