IRFHS9301TRPBF Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 6A/13A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 13A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerVDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 4000+ | 13.76 грн |
| 8000+ | 12.91 грн |
| 12000+ | 12.27 грн |
| 20000+ | 11.40 грн |
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Технічний опис IRFHS9301TRPBF Infineon Technologies
Description: MOSFET P-CH 30V 6A/13A 6PQFN, Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 6-PQFN (2x2) (DFN2020), Vgs(th) (Max) @ Id: 2.4V @ 25µA, Power Dissipation (Max): 2.1W (Ta), Rds On (Max) @ Id, Vgs: 37mOhm @ 7.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 13A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції IRFHS9301TRPBF за ціною від 11.49 грн до 48.76 грн
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IRFHS9301TRPBF | Infineon Technologies |
Description: MOSFET P-CH 30V 6A/13A 6PQFN Packaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 13A (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 7.8A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 25µA Supplier Device Package: 6-PQFN (2x2) (DFN2020) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V |
на замовлення 22252 шт: термін постачання 21-31 дні (днів) |
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IRFHS9301TRPBF | Infineon Technologies |
MOSFETs 1 P-CH -30V HEXFET 37mOhms 6.9nC |
на замовлення 28042 шт: термін постачання 21-30 дні (днів) |
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| IRFHS9301TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 6A/13A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
Description: MOSFET P-CH 30V 6A/13A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
на замовлення 22252 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 48.37 грн |
| 10+ | 33.37 грн |
| 100+ | 25.27 грн |
| 500+ | 18.22 грн |
| 1000+ | 15.74 грн |
| 2000+ | 14.96 грн |
| IRFHS9301TRPBF |
|
Виробник: Infineon Technologies
MOSFETs 1 P-CH -30V HEXFET 37mOhms 6.9nC
MOSFETs 1 P-CH -30V HEXFET 37mOhms 6.9nC
на замовлення 28042 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 48.76 грн |
| 10+ | 32.42 грн |
| 100+ | 22.41 грн |
| 500+ | 17.55 грн |
| 1000+ | 15.15 грн |
| 2000+ | 14.45 грн |
| 4000+ | 11.49 грн |