Технічний опис IRFI1010NPBF International Rectifier
Description: MOSFET N-CH 55V 49A TO220AB FP, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220AB Full-Pak, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 58W (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 26A, 10V, Current - Continuous Drain (Id) @ 25°C: 49A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Інші пропозиції IRFI1010NPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
IRFI1010NPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 49A TO220AB FPMounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220AB Full-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 26A, 10V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. |
|
IRFI1010NPBF | Infineon Technologies |
MOSFET MOSFT 55V 44A 12mOhm 86.7nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFI1010NPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 49A TO220AB FP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 55V 49A TO220AB FP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
товару немає в наявності
В кошику
од. на суму грн.
| IRFI1010NPBF |
![]() |
Виробник: Infineon Technologies
MOSFET MOSFT 55V 44A 12mOhm 86.7nC
MOSFET MOSFT 55V 44A 12mOhm 86.7nC
товару немає в наявності
В кошику
од. на суму грн.




