IRFI4019HG-117P

IRFI4019HG-117P Infineon Technologies


irfi4019hg-117p.pdf?fileId=5546d462533600a401535623e0901f71 Виробник: Infineon Technologies
Description: MOSFET 2N-CH 150V 8.7A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack, Formed Leads
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 18W
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 8.7A
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
Rds On (Max) @ Id, Vgs: 95mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: TO-220-5 Full-Pak
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Технічний опис IRFI4019HG-117P Infineon Technologies

Description: MOSFET 2N-CH 150V 8.7A TO220-5, Packaging: Tube, Package / Case: TO-220-5 Full Pack, Formed Leads, Mounting Type: Through Hole, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 18W, Drain to Source Voltage (Vdss): 150V, Current - Continuous Drain (Id) @ 25°C: 8.7A, Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V, Rds On (Max) @ Id, Vgs: 95mOhm @ 5.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, Vgs(th) (Max) @ Id: 4.9V @ 50µA, Supplier Device Package: TO-220-5 Full-Pak.

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IRFI4019HG-117P IRFI4019HG-117P Виробник : Infineon / IR Infineon_IRFI4019HG_117P_DataSheet_v01_01_EN-1228390.pdf MOSFET MOSFT DUAL NCh 150V 8.7A 5-Pin
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