IRFI7440GPBF Infineon Technologies
| Кількість | Ціна |
|---|---|
| 379+ | 93.27 грн |
| 500+ | 83.95 грн |
| 1000+ | 77.42 грн |
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Технічний опис IRFI7440GPBF Infineon Technologies
Description: IRFI7440 - HEXFET POWER MOSFET, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 95A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 57A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 100µA, Supplier Device Package: TO-220AB Full-Pak, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4549 pF @ 25 V.
Інші пропозиції IRFI7440GPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IRFI7440GPBF | International Rectifier |
 Description: IRFI7440 - HEXFET POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 57A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: TO-220AB Full-Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4549 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 191 шт В кошику од. на суму грн. |
 |
IRFI7440GPBF | Infineon Technologies |
MOSFET TRENCH <= 40V |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFI7440GPBF |
|
Виробник: International Rectifier
Description: IRFI7440 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 57A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4549 pF @ 25 V
Description: IRFI7440 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 57A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4549 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 191 шт
В кошику
од. на суму грн.
| IRFI7440GPBF |
|
Виробник: Infineon Technologies
MOSFET TRENCH <= 40V
MOSFET TRENCH <= 40V
товару немає в наявності
В кошику
од. на суму грн.