IRFL4105PBF International Rectifier


irfl4105.pdf
Виробник: International Rectifier
SOT-223 Транзистори
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Технічний опис IRFL4105PBF International Rectifier

Description: MOSFET N-CH 55V 3.7A SOT223, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: SOT-223, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tube.

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IRFL4105PBF IRFL4105PBF Infineon Technologies irfl4105pbf.pdf?fileId=5546d462533600a401535627f48c1fb8 description Description: MOSFET N-CH 55V 3.7A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tube
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IRFL4105PBF IRFL4105PBF Infineon Technologies Infineon_IRFL4105_DS_v01_01_EN-1226533.pdf description MOSFETs 55V 1 N-CH HEXFET 45mOhms 23nC
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IRFL4105PBF description irfl4105pbf.pdf?fileId=5546d462533600a401535627f48c1fb8
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 3.7A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
IRFL4105PBF description Infineon_IRFL4105_DS_v01_01_EN-1226533.pdf
Виробник: Infineon Technologies
MOSFETs 55V 1 N-CH HEXFET 45mOhms 23nC
товару немає в наявності
В кошику  од. на суму  грн.