Технічний опис IRFM120A FAIRCHILD
Description: N-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: SOT-223-4, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.4W (Ta), Rds On (Max) @ Id, Vgs: 200mOhm @ 1.15A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Bulk.
Інші пропозиції IRFM120A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IRFM120A | Виробник : Fairchild Semiconductor |
 Description: N-CHANNEL POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-223-4 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.15A, 10V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Bulk |
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