IRFM210BTF_FP001 onsemi
Виробник: onsemi
Description: MOSFET N-CH 200V 770MA SOT223-4
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 390mA, 10V
Current - Continuous Drain (Id) @ 25°C: 770mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
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Технічний опис IRFM210BTF_FP001 onsemi
Description: MOSFET N-CH 200V 770MA SOT223-4, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: SOT-223-4, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 390mA, 10V, Current - Continuous Drain (Id) @ 25°C: 770mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V.
Інші пропозиції IRFM210BTF_FP001
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IRFM210BTF_FP001 | Виробник : onsemi / Fairchild |
MOSFET 200V Single |
товару немає в наявності |