IRFNL210BTA-FP001 onsemi

Description: MOSFET N-CH 200V 1A TO92L, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-92L, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V.