Технічний опис IRFP4310ZPBFXKMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V, Power Dissipation (Max): 280W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.037mA, Supplier Device Package: PG-TO247-3-901, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V.
Інші пропозиції IRFP4310ZPBFXKMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
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| IRFP4310ZPBFXKMA1 | Виробник : Infineon Technologies | IRFP4310ZPBFXKMA1 |
товару немає в наявності |
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IRFP4310ZPBFXKMA1 | Виробник : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.037mA Supplier Device Package: PG-TO247-3-901 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V |
товару немає в наявності |
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| IRFP4310ZPBFXKMA1 | Виробник : Infineon Technologies |
 MOSFETs TRENCH >=100V |
товару немає в наявності |
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| IRFP4310ZPBFXKMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 134A; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 134A Case: TO247AC Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |