IRFP4868PBFAKMA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 42A, 10V, Power Dissipation (Max): 517W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PG-TO247-3-901, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10774 pF @ 50 V.