IRFP7718PBF Infineon Technologies
| Кількість | Ціна |
|---|---|
| 1+ | 450.62 грн |
| 10+ | 372.85 грн |
| 25+ | 305.89 грн |
| 100+ | 262.90 грн |
| 250+ | 248.10 грн |
| 400+ | 233.30 грн |
| 1200+ | 200.17 грн |
Відгуки про товар
Написати відгук
Технічний опис IRFP7718PBF Infineon Technologies
Description: MOSFET N-CH 75V 195A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V, Power Dissipation (Max): 517W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 830 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 29550 pF @ 25 V.
Інші пропозиції IRFP7718PBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
IRFP7718PBF | Infineon Technologies |
Description: MOSFET N-CH 75V 195A TO247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-247AC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 830 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 29550 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFP7718PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 195A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 830 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 29550 pF @ 25 V
Description: MOSFET N-CH 75V 195A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 830 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 29550 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.




