IRFR1010ZTRLPBF Infineon Technologies

Description: MOSFET N-CH 55V 42A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: TO-252AA (DPAK), Vgs(th) (Max) @ Id: 4V @ 100µA, Power Dissipation (Max): 140W (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).