IRFR120ZPBF

Виробник: International Rectifier
D-PAK Транзистори

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 8.7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V

Виробник: Infineon Technologies
MOSFETs 100V 1 N-CH HEXFET 26mOhms 70nC

Виробник: INFINEON
Description: INFINEON - IRFR120ZPBF - Leistungs-MOSFET, n-Kanal, 100 V, 8.7 A, 0.19 ohm, TO-252 (DPAK), Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100
Dauer-Drainstrom Id: 8.7
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 35
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.19
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 4
SVHC: No SVHC (27-Jun-2018)

Виробник: Infineon Technologies
Trans MOSFET N-CH Si 100V 8.7A 3-Pin(2+Tab) DPAK Tube

Виробник: Infineon Technologies
Trans MOSFET N-CH Si 100V 8.7A 3-Pin(2+Tab) DPAK Tube