IRFR12N25DCPBF Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 14A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 144W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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Технічний опис IRFR12N25DCPBF Infineon Technologies
Description: MOSFET N-CH 250V 14A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: D-Pak, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 144W (Tc), Rds On (Max) @ Id, Vgs: 260mOhm @ 8.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube.
Інші пропозиції IRFR12N25DCPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IRFR12N25DCPBF | Виробник : Infineon / IR |
MOSFET |
товару немає в наявності |