IRFR12N25DTRRP Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 14A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 144W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Технічний опис IRFR12N25DTRRP Infineon Technologies
Description: MOSFET N-CH 250V 14A DPAK, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252AA (DPAK), Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 144W (Tc), Rds On (Max) @ Id, Vgs: 260mOhm @ 8.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції IRFR12N25DTRRP
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
IRFR12N25DTRRP | Infineon / IR |
MOSFET MOSFET, 250V, 14A, 260 mOhm, 23 nC Qg, D-Pak |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFR12N25DTRRP |
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Виробник: Infineon / IR
MOSFET MOSFET, 250V, 14A, 260 mOhm, 23 nC Qg, D-Pak
MOSFET MOSFET, 250V, 14A, 260 mOhm, 23 nC Qg, D-Pak
товару немає в наявності
В кошику
од. на суму грн.



