Технічний опис IRFR18N15DPBF
- MOSFET, N, TO-252
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:150V
- Cont Current Id:18A
- On State Resistance:0.125ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:5.5V
- Case Style:DPAK
- Termination Type:SMD
- Alternate Case Style:D-PAK
- Max Voltage Vds:150V
- Max Voltage Vgs th:5.5V
- Power Dissipation:110W
- Power Dissipation Pd:110W
- Pulse Current Idm:72A
- SMD Marking:IRFR18N15D
- Transistor Case Style:D-PAK
Інші пропозиції IRFR18N15DPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IRFR18N15DPBF | International Rectifier |
  Transistor: N-MOSFET; unipolar; HEXFET; 150V; 18A; 110W; DPAK Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
IRFR18N15DPBF | Infineon Technologies |
Description: MOSFET N-CH 150V 18A DPAK Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA (DPAK) Vgs(th) (Max) @ Id: 5.5V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRFR18N15DPBF | Infineon Technologies |
MOSFET 150V 1 N-CH HEXFET 125mOhms 28nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFR18N15DPBF |
|
Виробник: International Rectifier
Transistor: N-MOSFET; unipolar; HEXFET; 150V; 18A; 110W; DPAK Транзистори
Transistor: N-MOSFET; unipolar; HEXFET; 150V; 18A; 110W; DPAK Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| IRFR18N15DPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 18A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Description: MOSFET N-CH 150V 18A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IRFR18N15DPBF |
|
Виробник: Infineon Technologies
MOSFET 150V 1 N-CH HEXFET 125mOhms 28nC
MOSFET 150V 1 N-CH HEXFET 125mOhms 28nC
товару немає в наявності
В кошику
од. на суму грн.