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IRFR3303TRPBF

IRSDS10213-1.pdf?t.download=true&u=5oefqw irfr3303pbf.pdf?fileId=5546d462533600a401535630f56c208d
Виробник: IR
D-PAK 0831+
на замовлення 5000 шт:
термін постачання 14-28 дні (днів)
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Технічний опис IRFR3303TRPBF IR

Description: HEXFET N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 31mOhm @ 18A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D-Pak, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V.

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IRFR3303TRPBF IRFR3303TRPBF International Rectifier IRSDS10213-1.pdf?t.download=true&u=5oefqw Description: HEXFET N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
товару немає в наявності
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IRFR3303TRPBF IRFR3303TRPBF Infineon Technologies irfr3303pbf.pdf?fileId=5546d462533600a401535630f56c208d Description: MOSFET N-CH 30V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
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IRFR3303TRPBF IRFR3303TRPBF Infineon / IR Infineon_IRFR3303_DataSheet_v01_01_EN-1732716.pdf MOSFET 30V 1 N-CH HEXFET 31mOhms 19.3nC
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IRFR3303TRPBF IRSDS10213-1.pdf?t.download=true&u=5oefqw
IRFR3303TRPBF
Виробник: International Rectifier
Description: HEXFET N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFR3303TRPBF irfr3303pbf.pdf?fileId=5546d462533600a401535630f56c208d
IRFR3303TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFR3303TRPBF Infineon_IRFR3303_DataSheet_v01_01_EN-1732716.pdf
IRFR3303TRPBF
Виробник: Infineon / IR
MOSFET 30V 1 N-CH HEXFET 31mOhms 19.3nC
товару немає в наявності
В кошику  од. на суму  грн.