Технічний опис IRFR3505PBF
- MOSFET, N, 55V, 71A, D-PAK
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:55V
- Cont Current Id:71A
- On State Resistance:0.013ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:4V
- Case Style:DPAK
- Termination Type:SMD
- Alternate Case Style:D-PAK
- Junction to Case Thermal Resistance A:1.09`C/W
- Max Voltage Vds:55V
- On State resistance @ Vgs = 10V:13mohm
- Power Dissipation:140W
- Power Dissipation Pd:140W
- Pulse Current Idm:280A
- Transistor Case Style:D-PAK
Інші пропозиції IRFR3505PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRFR3505PBF | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 55V 30A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V |
товар відсутній |
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IRFR3505PBF | Виробник : Infineon Technologies |
MOSFET 55V 1 N-CH HEXFET 13mOhms 62nC |
товар відсутній |