Технічний опис IRFR3518TRPBF International Rectifier
Description: MOSFET N-CH 80V 38A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-252AA (DPAK), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 110W (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції IRFR3518TRPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
IRFR3518TRPBF | Infineon Technologies |
Description: MOSFET N-CH 80V 38A DPAKInput Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-252AA (DPAK) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
|
IRFR3518TRPBF | Infineon Technologies |
Description: MOSFET N-CH 80V 38A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 18A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
IRFR3518TRPBF | Infineon Technologies |
MOSFET MOSFT 80V 38A 29mOhm 37nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFR3518TRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 38A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V 38A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| IRFR3518TRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 38A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 18A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
Description: MOSFET N-CH 80V 38A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 18A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRFR3518TRPBF |
![]() |
Виробник: Infineon Technologies
MOSFET MOSFT 80V 38A 29mOhm 37nC
MOSFET MOSFT 80V 38A 29mOhm 37nC
товару немає в наявності
В кошику
од. на суму грн.




