Технічний опис IRFR3704TRLPBF IR
Description: MOSFET N-CH 20V 75A DPAK, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1996 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: D-Pak, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 90W (Tc).
Інші пропозиції IRFR3704TRLPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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IRFR3704TRLPBF | Infineon Technologies |
 Description: MOSFET N-CH 20V 75A DPAKRds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1996 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 90W (Tc) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRFR3704TRLPBF | Infineon / IR |
MOSFET MOSFT 20V 62A 9.5mOhm 19nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFR3704TRLPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 75A DPAK
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1996 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 90W (Tc)
Description: MOSFET N-CH 20V 75A DPAK
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1996 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 90W (Tc)
товару немає в наявності
В кошику
од. на суму грн.
| IRFR3704TRLPBF |
|
Виробник: Infineon / IR
MOSFET MOSFT 20V 62A 9.5mOhm 19nC
MOSFET MOSFT 20V 62A 9.5mOhm 19nC
товару немає в наявності
В кошику
од. на суму грн.