Технічний опис IRFR3708TRPBF International Rectifier
Description: MOSFET N-CH 30V 61A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 2417 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V, Part Status: Obsolete, Supplier Device Package: TO-252AA (DPAK), Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 87W (Tc), Rds On (Max) @ Id, Vgs: 12.5mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 61A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції IRFR3708TRPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
IRFR3708TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 61A DPAKInput Capacitance (Ciss) (Max) @ Vds: 2417 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Part Status: Obsolete Supplier Device Package: TO-252AA (DPAK) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
|
IRFR3708TRPBF | Infineon Technologies |
MOSFETs 30V 1 N-CH HEXFET 12.5mOhms 24nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFR3708TRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 61A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2417 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 87W (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 61A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2417 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 87W (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| IRFR3708TRPBF |
![]() |
Виробник: Infineon Technologies
MOSFETs 30V 1 N-CH HEXFET 12.5mOhms 24nC
MOSFETs 30V 1 N-CH HEXFET 12.5mOhms 24nC
товару немає в наявності
В кошику
од. на суму грн.




