IRFR4104TRLPBF Infineon Technologies
| Кількість | Ціна |
|---|---|
| 3+ | 128.72 грн |
| 10+ | 105.20 грн |
| 100+ | 72.62 грн |
| 250+ | 67.52 грн |
| 500+ | 61.45 грн |
| 1000+ | 52.65 грн |
| 3000+ | 48.46 грн |
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Технічний опис IRFR4104TRLPBF Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: TO-252AA (DPAK), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 140W (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V, Current - Continuous Drain (Id) @ 25°C: 42A (Tc).
Інші пропозиції IRFR4104TRLPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IRFR4104TRLPBF | Infineon Technologies |
 Description: MOSFET N-CH 40V 42A DPAKInput Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: TO-252AA (DPAK) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 140W (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| IRFR4104TRLPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 140W (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Description: MOSFET N-CH 40V 42A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 140W (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.