Технічний опис IRFR7746PBF Infineon Technologies
Description: MOSFET N-CH 75V 56A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 3107 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: D-PAK (TO-252AA), Vgs(th) (Max) @ Id: 3.7V @ 100µA, Power Dissipation (Max): 99W (Tc), Rds On (Max) @ Id, Vgs: 11.2mOhm @ 35A, 10V, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube.
Інші пропозиції IRFR7746PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IRFR7746PBF | International Rectifier |
 Description: HEXFET POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 3107 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: D-PAK (TO-252AA) Vgs(th) (Max) @ Id: 3.7V @ 100µA Power Dissipation (Max): 99W (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk Part Status: Active |
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В кошику од. на суму грн. |
 |
IRFR7746PBF | Infineon Technologies |
Description: MOSFET N-CH 75V 56A DPAK Input Capacitance (Ciss) (Max) @ Vds: 3107 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Discontinued at Digi-Key Supplier Device Package: D-PAK (TO-252AA) Vgs(th) (Max) @ Id: 3.7V @ 100µA Power Dissipation (Max): 99W (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFR7746PBF |
|
Виробник: International Rectifier
Description: HEXFET POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3107 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: D-PAK (TO-252AA)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Power Dissipation (Max): 99W (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Part Status: Active
Description: HEXFET POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3107 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: D-PAK (TO-252AA)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Power Dissipation (Max): 99W (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| IRFR7746PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 56A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3107 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D-PAK (TO-252AA)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Power Dissipation (Max): 99W (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Description: MOSFET N-CH 75V 56A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3107 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D-PAK (TO-252AA)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Power Dissipation (Max): 99W (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.