IRFR825PBF

Виробник: International Rectifier
MOSF N CH 500V 6A DPAK Транзистори

Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 6A DPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 119W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)

Виробник: Amphenol
Circular MIL Spec Connector

Виробник: Infineon / IR
MOSFET 500V 3.5A 2.2Ohm MotIRFET