Технічний опис IRFR9N20DPBF
- MOSFET, N, 200V, 9.4A, D-PAK
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:200V
- Cont Current Id:9.4A
- On State Resistance:0.38ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:5.5V
- Case Style:DPAK
- Termination Type:SMD
- Alternate Case Style:D-PAK
- Junction to Case Thermal Resistance A:1.75`C/W
- Max Voltage Vds:200V
- Max Voltage Vgs th:5.5V
- Power Dissipation:86W
- Power Dissipation Pd:86W
- Pulse Current Idm:38A
- SMD Marking:IRFR9N20D
- Transistor Case Style:D-PAK
Інші пропозиції IRFR9N20DPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRFR9N20DPBF | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 200V 9.4A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V |
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IRFR9N20DPBF | Виробник : Infineon Technologies |
MOSFET 200V 1 N-CH HEXFET 380mOhms 18nC |
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