Технічний опис IRFR9N20DTRPBF Infineon Technologies
Description: MOSFET N-CH 200V 9.4A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V, Power Dissipation (Max): 86W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V.
Інші пропозиції IRFR9N20DTRPBF
Фото | Назва | Виробник | Інформація |
Доступність |
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IRFR9N20DTRPBF | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 9.4A; 86W; DPAK Case: DPAK Mounting: SMD Drain-source voltage: 200V Drain current: 9.4A Type of transistor: N-MOSFET Power dissipation: 86W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhancement кількість в упаковці: 2000 шт |
товару немає в наявності |
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IRFR9N20DTRPBF | Виробник : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V |
товару немає в наявності |
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IRFR9N20DTRPBF | Виробник : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V |
товару немає в наявності |
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IRFR9N20DTRPBF | Виробник : Infineon / IR |
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товару немає в наявності |
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![]() |
IRFR9N20DTRPBF | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 9.4A; 86W; DPAK Case: DPAK Mounting: SMD Drain-source voltage: 200V Drain current: 9.4A Type of transistor: N-MOSFET Power dissipation: 86W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhancement |
товару немає в наявності |