Технічний опис IRFS23N20D IR
Description: MOSFET N-CH 200V 24A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 5.5V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 170W (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ).
Інші пропозиції IRFS23N20D
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IRFS23N20D | International Rectifier/Infineon |
 MOSFET N-CH 200V 24A D2PAK... Транзистори Корпус: TO-263 (D2PAK Од. вим: шткількість в упаковці: 50 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
IRFS23N20D | Infineon Technologies |
Description: MOSFET N-CH 200V 24A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 5.5V @ 250µA Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFS23N20D |
|
Виробник: International Rectifier/Infineon
MOSFET N-CH 200V 24A D2PAK... Транзистори Корпус: TO-263 (D2PAK Од. вим: шт
кількість в упаковці: 50 шт
MOSFET N-CH 200V 24A D2PAK... Транзистори Корпус: TO-263 (D2PAK Од. вим: шт
кількість в упаковці: 50 шт
товару немає в наявності
В кошику
од. на суму грн.
| IRFS23N20D |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 24A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Description: MOSFET N-CH 200V 24A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
товару немає в наявності
В кошику
од. на суму грн.