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IRFS23N20DTRLP Infineon Technologies

Name: IRFS23N20DTRLP
Brand: INFINEON TECHNOLOGIES
SKU: 459850222-1
Price: 296.39 UAH
Availability: BackOrder

Виробник: Infineon Technologies
Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK T/R

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Технічний опис IRFS23N20DTRLP Infineon Technologies

Description: MOSFET N-CH 200V 24A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V, Power Dissipation (Max): 3.8W (Ta), 170W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V.

Інші пропозиції IRFS23N20DTRLP

Назва	Виробник	Інформація	Доступність	Ціна
IRFS23N20DTRLP	Виробник : INFINEON TECHNOLOGIES	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 170W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 17A Power dissipation: 170W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 57nC Kind of package: reel Kind of channel: enhancement Technology: HEXFET® кількість в упаковці: 1 шт	товару немає в наявності	В кошику од. на суму грн.
IRFS23N20DTRLP	Виробник : Infineon Technologies	Description: MOSFET N-CH 200V 24A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V	товару немає в наявності	В кошику од. на суму грн.
IRFS23N20DTRLP	Виробник : Infineon Technologies	Description: MOSFET N-CH 200V 24A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V	товару немає в наявності	В кошику од. на суму грн.
IRFS23N20DTRLP	Виробник : Infineon / IR	MOSFET MOSFT 200V 24A 100mOhm 57nC	товару немає в наявності	В кошику од. на суму грн.
IRFS23N20DTRLP	Виробник : INFINEON TECHNOLOGIES	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 170W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 17A Power dissipation: 170W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 57nC Kind of package: reel Kind of channel: enhancement Technology: HEXFET®	товару немає в наявності	В кошику од. на суму грн.