Технічний опис IRFS3006-7PPBF Infineon
Description: MOSFET N-CH 60V 240A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 8850 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: D2PAK (7-Lead), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB, Packaging: Tube.
Інші пропозиції IRFS3006-7PPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IRFS3006-7PPBF | International Rectifier |
  D2PAK-7 Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
IRFS3006-7PPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 240A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 8850 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Discontinued at Digi-Key Supplier Device Package: D2PAK (7-Lead) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFS30067PPBF | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Input Capacitance (Ciss) (Max) @ Vds: 8850 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D2PAK (7-Lead) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
IRFS3006-7PPBF | Infineon / IR |
MOSFET 60V 1 N-CH HEXFET 2.1mOhms 200nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFS3006-7PPBF |
|
Виробник: International Rectifier
D2PAK-7 Транзистори
D2PAK-7 Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| IRFS3006-7PPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 240A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 8850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tube
Description: MOSFET N-CH 60V 240A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 8850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IRFS30067PPBF |
|
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 8850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Packaging: Bulk
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 8850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| IRFS3006-7PPBF |
|
Виробник: Infineon / IR
MOSFET 60V 1 N-CH HEXFET 2.1mOhms 200nC
MOSFET 60V 1 N-CH HEXFET 2.1mOhms 200nC
товару немає в наявності
В кошику
од. на суму грн.