Технічний опис IRFS3107PBF Infineon Technologies
Description: MOSFET N-CH 75V 195A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 9370 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 370W (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 140A, 10V, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Інші пропозиції IRFS3107PBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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IRFS3107PBF | Infineon Technologies |
 Description: MOSFET N-CH 75V 195A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 9370 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Discontinued at Digi-Key Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 140A, 10V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
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IRFS3107PBF | Infineon Technologies |
MOSFET 75V 1 N-CH HEXFET 3mOhms 160nC |
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В кошику од. на суму грн. |
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IRFS3107PBF | INFINEON |
Description: INFINEON - IRFS3107PBF - Leistungs-MOSFET, n-Kanal, 75 V, 230 A, 0.0025 ohm, TO-263 (D2PAK), Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 75 Dauer-Drainstrom Id: 230 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 370 Gate-Source-Schwellenspannung, max.: 2.35 Verlustleistung: 370 Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0025 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.0025 SVHC: No SVHC (27-Jun-2018) |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFS3107PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 195A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 9370 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 140A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: MOSFET N-CH 75V 195A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 9370 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 140A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IRFS3107PBF |
|
Виробник: Infineon Technologies
MOSFET 75V 1 N-CH HEXFET 3mOhms 160nC
MOSFET 75V 1 N-CH HEXFET 3mOhms 160nC
товару немає в наявності
В кошику
од. на суму грн.
| IRFS3107PBF |
|
Виробник: INFINEON
Description: INFINEON - IRFS3107PBF - Leistungs-MOSFET, n-Kanal, 75 V, 230 A, 0.0025 ohm, TO-263 (D2PAK), Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 75
Dauer-Drainstrom Id: 230
Qualifikation: -
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 370
Gate-Source-Schwellenspannung, max.: 2.35
Verlustleistung: 370
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0025
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.0025
SVHC: No SVHC (27-Jun-2018)
Description: INFINEON - IRFS3107PBF - Leistungs-MOSFET, n-Kanal, 75 V, 230 A, 0.0025 ohm, TO-263 (D2PAK), Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 75
Dauer-Drainstrom Id: 230
Qualifikation: -
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 370
Gate-Source-Schwellenspannung, max.: 2.35
Verlustleistung: 370
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0025
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.0025
SVHC: No SVHC (27-Jun-2018)
товару немає в наявності
В кошику
од. на суму грн.