IRFS3306PBF Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4520 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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Технічний опис IRFS3306PBF Infineon Technologies
Description: MOSFET N-CH 60V 120A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 4520 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 150µA, Power Dissipation (Max): 230W (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Інші пропозиції IRFS3306PBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
IRFS3306PBF | Infineon Technologies |
MOSFET 60V 1 N-CH HEXFET 4.2mOhms 85nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFS3306PBF |
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Виробник: Infineon Technologies
MOSFET 60V 1 N-CH HEXFET 4.2mOhms 85nC
MOSFET 60V 1 N-CH HEXFET 4.2mOhms 85nC
товару немає в наявності
В кошику
од. на суму грн.



