Технічний опис IRFS4010-7PPBF International Rectifier
Description: MOSFET N-CH 100V 190A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 9830 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 380W (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V, Current - Continuous Drain (Id) @ 25°C: 190A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB, Packaging: Tube.
Інші пропозиції IRFS4010-7PPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
IRFS4010-7PPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 190A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 9830 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Discontinued at Digi-Key Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V Current - Continuous Drain (Id) @ 25°C: 190A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
|
IRFS4010-7PPBF | Infineon Technologies |
MOSFETs MOSFT 100V 190A 4.0mOhm 150nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFS4010-7PPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 190A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 9830 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 380W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tube
Description: MOSFET N-CH 100V 190A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 9830 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 380W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IRFS4010-7PPBF |
![]() |
Виробник: Infineon Technologies
MOSFETs MOSFT 100V 190A 4.0mOhm 150nC
MOSFETs MOSFT 100V 190A 4.0mOhm 150nC
товару немає в наявності
В кошику
од. на суму грн.




