IRFS4010-7PPBF Infineon Technologies

Description: MOSFET N-CH 100V 190A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 9830 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 380W (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V, Current - Continuous Drain (Id) @ 25°C: 190A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB, Packaging: Tube.