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IRFS4020TRLPBF

IRFS4020TRLPBF Infineon Technologies

Infineon_IRFS4020_DataSheet_v01_01_EN-3363170.pdf
Виробник: Infineon Technologies
MOSFETs Aud MOSFT 200V 18A 105mOhm 18nC Qg
на замовлення 5876 шт:
термін постачання 21-30 дні (днів)
КількістьЦіна
2+165.28 грн
10+114.29 грн
100+70.13 грн
800+56.60 грн
2400+52.02 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
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Технічний опис IRFS4020TRLPBF Infineon Technologies

Description: MOSFET N-CH 200V 18A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 11A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 4.9V @ 100µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V.

Інші пропозиції IRFS4020TRLPBF

Фото Назва Виробник Інформація Доступність Ціна
IRFS4020TRLPBF IRFS4020TRLPBF Infineon Technologies irfs4020pbf.pdf?fileId=5546d462533600a401535636d48b218a Description: MOSFET N-CH 200V 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 11A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS4020TRLPBF IRFS4020TRLPBF Infineon Technologies irfs4020pbf.pdf?fileId=5546d462533600a401535636d48b218a Description: MOSFET N-CH 200V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 11A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS4020TRLPBF IRFS4020TRLPBF INFINEON TECHNOLOGIES IRFS4020TRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; D2PAK
Polarisation: unipolar
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel
Power dissipation: 100W
Drain current: 18A
Drain-source voltage: 200V
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRFS4020TRLPBF irfs4020pbf.pdf?fileId=5546d462533600a401535636d48b218a
IRFS4020TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 11A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS4020TRLPBF irfs4020pbf.pdf?fileId=5546d462533600a401535636d48b218a
IRFS4020TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 11A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS4020TRLPBF IRFS4020TRLPBF.pdf
IRFS4020TRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; D2PAK
Polarisation: unipolar
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel
Power dissipation: 100W
Drain current: 18A
Drain-source voltage: 200V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.