Технічний опис IRFS4321PBF Infineon
Description: MOSFET N-CH 150V 85A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 33A, 10V, Power Dissipation (Max): 350W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: D2PAK, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 25 V.
Інші пропозиції IRFS4321PBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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IRFS4321PBF | Infineon Technologies |
 Description: MOSFET N-CH 150V 85A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 33A, 10V Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 25 V |
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В кошику од. на суму грн. |
 |
IRFS4321PBF | Infineon Technologies |
MOSFETs 150V 1 N-CH HEXFET 15mOhms 71nC |
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В кошику од. на суму грн. |
 |
IRFS4321PBF | INFINEON |
Description: INFINEON - IRFS4321PBF - Leistungs-MOSFET, n-Kanal, 150 V, 83 A, 0.012 ohm, TO-263 (D2PAK), Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150 Dauer-Drainstrom Id: 83 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 330 Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.012 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 5 SVHC: No SVHC (27-Jun-2018) |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFS4321PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 85A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 33A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 25 V
Description: MOSFET N-CH 150V 85A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 33A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRFS4321PBF |
|
Виробник: Infineon Technologies
MOSFETs 150V 1 N-CH HEXFET 15mOhms 71nC
MOSFETs 150V 1 N-CH HEXFET 15mOhms 71nC
товару немає в наявності
В кошику
од. на суму грн.
| IRFS4321PBF |
|
Виробник: INFINEON
Description: INFINEON - IRFS4321PBF - Leistungs-MOSFET, n-Kanal, 150 V, 83 A, 0.012 ohm, TO-263 (D2PAK), Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 150
Dauer-Drainstrom Id: 83
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 330
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.012
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 5
SVHC: No SVHC (27-Jun-2018)
Description: INFINEON - IRFS4321PBF - Leistungs-MOSFET, n-Kanal, 150 V, 83 A, 0.012 ohm, TO-263 (D2PAK), Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 150
Dauer-Drainstrom Id: 83
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 330
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.012
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 5
SVHC: No SVHC (27-Jun-2018)
товару немає в наявності
В кошику
од. на суму грн.