Інші пропозиції IRFS52N15DPBF
| Фото | Назва | Виробник | Інформація |
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IRFS52N15DPBF | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 150V 51A 3-Pin(2+Tab) D2PAK Tube |
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IRFS52N15DPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 150V 51A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 36A, 10V Power Dissipation (Max): 3.8W (Ta), 230W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V |
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IRFS52N15DPBF | Виробник : Infineon Technologies |
MOSFET 150V 1 N-CH HEXFET 32mOhms 60nC |
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IRFS52N15DPBF | Виробник : Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 60A Power dissipation: 320W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 32mΩ Mounting: SMD Gate charge: 60nC Kind of channel: enhanced |
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